Variable

Value

Variable

Value

Purge-trap:

Trap

Tenax

GC start

Start of desorb

Valve oven temperature

140^°C

Desorb preheat temperature

175^°C

Transfer line temperature

140^°C

Desorb temperature

180^°C

Sample mount temperature

90^°C

Desorb drain

On

Sample preheat time

1 min

Desorb time

3 min

Sample temperature

80^°C

Bake time

15 min

Purge time

11 min

Bake temperature

200^°C

Purge temperature: Trap

20^°C

Bake flow

200 mL/min

Purge flow

40 mL/min

Water management fitting : At Bake: temperature

240^°C

Water management fitting:
At Purge: temperature

120^°C

Water management fitting:
At Desorb: temperature

0^°C

Dry purge time

3.00 min.

GC-MS:

GC

MS

Oven:

Mode

EI/SIM, SCAN

Helium gas flow

1 mL/min

Electron energy

70 ev

Initial temperature/time

40^°C/3 min

Emission current

34.6 µA

Ramp rate 1

5^°C/min

EMV mode

Gain Factor/Atune

Final temperature 1/final time 1

160^°/2 min

Gain Factor

25.00

Ramp rate 2

20^°C/min

Transfer line temperature

280^°C

Final temperature 2/final time 2

280^°C/5 min

Source temperature^b

230^°C

Injector:

Quadrupole temperature

150^°C

Heater

200^°C

Solvent delay^c

7.5 min

Pressure

9.1473 psi

Total flow

4.8 mL/min

Scan parameters:

Septum purge flow

Off

Low mass

40.0

Injector mode

Pulsed (23 psi),
Split (3 min)

High mass

200.0

Injection volume

1 uL^a

Threshold

0

Split ratio

3:1

Sample #

2 A/D samples 4

Split flow

3.6 mL/min