| Sample |
Film stack (Top-down) |
MOCVD TiN condition |
| Growth time |
Plasma |
Plasma |
| Treatment power |
Treatment time |
| a |
ALD W/MOCVD TiN/ ALD TiN/ HfO2/IL/Si sub. |
7s |
400W |
7s |
| b |
ALD W/MOCVD TiN/ ALD TiN/ HfO2/IL/Si sub. |
15s |
400W |
7s |
| c |
ALD W/MOCVD TiN/ ALD TiN/ HfO2/IL/Si sub. |
7s |
— |
— |
| d |
ALD W/MOCVD TiN/PVD Ti/ALD TiN/ HfO2/IL/Si sub. |
7s |
400W |
7s |
|
