Figure 1: In panel A a pictorial description of the Si mold fabrication by microlithography and DRIE processes is shown. Firstly, a 3.5 μm optical resist layer is obtained onto cleaned Si wafer by spin coating and a void disk pattern is defined by optical lithography (i). Disk diameter and periodicity is set to be 10 μm and 20 μm, respectively. (ii) Time multiplexed Deep Reactive Ion Etching process is employed to determine 10 μm depth cylindrical wells in correspondence to void disk pattern. (iii) Mold’s SEM images; cross section and top view. In panel B the mold’s surface is primed by means of anti-sticking layer deposition (i). A direct nanoimprint process is finally performed: PCL pellets are placed onto a silanized glass support and pre-melted at 130 °C (ii), Silicon mold is placed in contact with the polymer to imprint. After nanoimprinting process (Timprint= 68 °C,Pimprint = 5 bar), mold and support are peeled-off and a 500 μm freestanding PCL pillared surface is obtained (iii)