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R=0.5 (10MLs/19MLs asymmetrical GaSb-rich structure for a total SL period of 87Å), R=1 (10MLs/10MLs symmetrical structure for a total SL period of 60Å), R=1.75 (7MLs/4MLs asymmetrical InAs-rich structure for a total SL period of 34Å). |
Figure 2: Calculated interminiband SL bandgap at 77K as a function of the SL period thickness (1ML=3Å) for three different thickness ratio R=InAs/GaSb: |