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Ramam Akkipeddi

Ramam Akkipeddi

Institute of Materials Research and Engineering


Dr. Ramam has been in the field of semiconductors for the last over 25 years. He started his career with the Defense R & D labs in India working on GaAs based millimeter wave (mmW) devices and Monolithic Microwave Integrated Circuits (MMICs). He was awarded the “Young Scientist” award for developing a process for 94GHz beam lead Schottky diode and later sent to Plessey III-V in U.K to get involved in the technology development of MMICs. He then moved to SGS-Thompson Microelectronics, Singapore as a senior manufacturing engineer focusing on bipolar integrated circuits technology, before joining the National University of Singapore. He specialized in the growth of arsenide based ternary/quaternary epitaxial materials by MBE and on the optical characterization of materials. For the last 15 years he has been with the Institute of Materials Research and Engineering (IMRE), A*STAR, involved in the fabrication aspects of GaN based LEDs, integration of InP based photonic devices with MEMS and nanotechnology areas. He is a senior member of IEEE and has organised/chaired a number of symposia in international conferences. He is the vice-president of Asia Nano Forum (ANF), a network society of 15 Asian organizations and an active member of the ISO TC 229 mirror group on nanotechnologies. He is the recipient of A*STAR’s top award, the STAR Employee Award, for the year 2011 and is currently senior scientist III/Advisor to the SERC nanofabrication and characterization (SNFC) group at IMRE.