Institute of Materials Research and Engineering
Dr. Ramam has been in the field of semiconductors for the last over 25 years. He started his career with the Defense R & D labs in India working on GaAs based millimeter wave (mmW) devices and Monolithic Microwave Integrated Circuits (MMICs). He was awarded the “Young Scientist” award for developing a process for 94GHz beam lead Schottky diode and later sent to Plessey III-V in U.K to get involved in the technology development of MMICs. He then moved to SGS-Thompson Microelectronics, Singapore as a senior manufacturing engineer focusing on bipolar integrated circuits technology, before joining the National University of Singapore. He specialized in the growth of arsenide based ternary/quaternary epitaxial materials by MBE and on the optical characterization of materials. For the last 15 years he has been with the Institute of Materials Research and Engineering (IMRE), A*STAR, involved in the fabrication aspects of GaN based LEDs, integration of InP based photonic devices with MEMS and nanotechnology areas. He is a senior member of IEEE and has organised/chaired a number of symposia in international conferences. He is the vice-president of Asia Nano Forum (ANF), a network society of 15 Asian organizations and an active member of the ISO TC 229 mirror group on nanotechnologies. He is the recipient of A*STAR’s top award, the STAR Employee Award, for the year 2011 and is currently senior scientist III/Advisor to the SERC nanofabrication and characterization (SNFC) group at IMRE.