Magnetoelectronic Materials and Multiferroic Materials

Magnetic disk read-heads, magnetic random-access memories (MRAM) and spin-dependent conveyance assemblies can all be sheltered by the term magnetoelectronic devices. This assessment covers spin-dependent transference in magnetic multilayers and features of exploitation of this physical property for magnetic nonvolatile memories. Materials that exhibit more than one of the primary ferroic properties are defined as multiferroics. Magnetoelectric and multiferroics are both space-inversion and time-reversal anti-symmetric (ferromagnetic and ferroelectric). Most multiferroic materials identified to date are transition-metal oxides, which are compounds made of transition metals with oxygen and often an additional main-group cation. Transition-metal oxides are a favorable class of materials for identifying multiferroics.

Magnetoelectronic has provided some of the most stirring zones for the investigation of novel physical wonders and innovative technologically significant devices such as spin-valve GMR read-heads, and magnetic random-access memory (MRAM). Multiferroics have potential for applications as actuators, switches, magnetic field sensors or new types of electronic memory devices. Many multiferroics have the structure, perovskite. The most of the well-studied ferroelectrics are perovskites and in part because the structure is of high chemical versatility.

  • Multifunctional magnetic materials
  • Giant magnetoresistance
  • Magnetoelectric interfaces
  • Magnetic tunnel junction
  • Half-metallic materials
  • Complex oxides
  • Magnetoresistance
  • Single-phase multi-ferroic materials
  • Composite multi-ferroic materials
  • Ferromagnetism

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