alexa Analytical Study of Electron Mobility in Hemts Algan/Gan
ISSN: 2332-0796

Journal of Electrical & Electronic Systems
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Research Article

Analytical Study of Electron Mobility in Hemts Algan/Gan

Nouacry A1,2*, Touhami A1, Benkassou A1, Bouziane A2 and Aouaj A2

1Materials Physics Laboratory, Microelectronics, Automation & Thermal - University Hassan II, Morocco

2Automation Laboratory, Energy Conversion and Microelectronics - University Sultan Moulay Slimane, Morocco

*Corresponding Author:
Nouacry A
Materials Physics Laboratory
Microelectronics
Automation and Thermal - University Hassan II, Morocco
Tel: 212523485112
E-mail: [email protected]

Received Date: October 16, 2015; Accepted Date: December 29, 2015; Published Date: January 01, 2016

Citation: Nouacry A, Touhami A, Benkassou A, Bouziane A, Aouaj A (2016) Analytical Study of Electron Mobility in Hemts Algan/Gan. J Electr Electron Syst 5:169. doi:10.4172/2332-0796.1000169

Copyright: © 2016 Nouacry A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Abstract

The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mobility Transistor) are based on the heterojunction AlGaN/GaN. Our work is the subject of an analytical study of the carrier mobility HEMTs AlGaN/GaN calculating Ionized impurities scattering, Residual impurities scattering, Interface roughness scattering, Alloy disorder scattering, dislocations scattering, Phonons and Dipoles taking into account the impact of technological parameters (doping, aluminium content) and geometric (thickness barrier, interface roughness). The results allowed us to take account of the variation of carrier density in the wells of 2D electronic gas.

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