Analytical Study of Electron Mobility in Hemts Algan/Gan
- *Corresponding Author:
- Nouacry A
Materials Physics Laboratory
Automation and Thermal - University Hassan II, Morocco
E-mail: [email protected]
Received Date: October 16, 2015; Accepted Date: December 29, 2015; Published Date: January 01, 2016
Citation: Nouacry A, Touhami A, Benkassou A, Bouziane A, Aouaj A (2016) Analytical Study of Electron Mobility in Hemts Algan/Gan. J Electr Electron Syst 5:169. doi:10.4172/2332-0796.1000169
Copyright: © 2016 Nouacry A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mobility Transistor) are based on the heterojunction AlGaN/GaN. Our work is the subject of an analytical study of the carrier mobility HEMTs AlGaN/GaN calculating Ionized impurities scattering, Residual impurities scattering, Interface roughness scattering, Alloy disorder scattering, dislocations scattering, Phonons and Dipoles taking into account the impact of technological parameters (doping, aluminium content) and geometric (thickness barrier, interface roughness). The results allowed us to take account of the variation of carrier density in the wells of 2D electronic gas.