Characterization of Surface Layer in Mo/Si Multilayer Using TotalElectron Yield and X-ray Reflectivity TechniquesMamta Sinha1,2* and Mohammed H Modi1
- *Corresponding Author:
- Mamta Sinha
Birla Institute of Technology, Mesra
Tel: 0651 227 5444
E-mail: [email protected]
Received Date: October 01, 2016; Accepted Date: October 31, 2016; Published Date: November 14, 2016
Citation: Sinha M, Modi MH (2016) Characterization of Surface Layer in Mo/Si Multilayer Using Total Electron Yield and X-ray Reflectivity Techniques. J Laser Opt Photonics 3:138. doi: 10.4172/2469-410X.1000138
Copyright: © 2016 Sinha M, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
In x-ray multilayer, the thickness of top layer plays an important role in determining its reflectivity performance. In experimentally grown multilayer, the top layer parameters are found significantly different from those of underneath layers due to growth related issues and contamination effect. The calculations suggest that for top layer characterization the sensitivity of reflectivity technique depends on layer material. Considering the top layer of silicon the first Bragg peak reflectivity of Mo/Si multilayer changes by 2-3% while change in top layer thickness by a factor of two and more, In case of SiO2 as a top layer material the 1st Bragg peak reflectivity changes by 13%. The analysis of total electron yield (TEY) data reveals that the technique can be used to probe 2-4 Å variation in top layer thickness. The both technique-reflectivity and TEY, together gives an complete information of multilayer structural parameters.