alexa Design and simulation of a compact lowstiffness MEMS-gate for Suspended-gate MOSFET
ISSN: 0976-4860

International Journal of Advancements in Technology
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Research Article

Design and simulation of a compact lowstiffness MEMS-gate for Suspended-gate MOSFET

Richik Kashyap*, S.Baishya and Johnson Taye

Electronics and Communication Engineering Department, National Institute of Technology Silchar (NITS),Silchar,Assam 788010,India

Corresponding Author:
Richik Kashyap
Electronics and Communication Engineering Department
National Institute of Technology Silchar (NITS)
Silchar,Assam 788010,India
E-mail: [email protected]


In this paper, first of allsome of the design aspects of fixed-fixed beam MEMS switches are being cited and reviewed and based upon the related mechanics involved, we have developed a new compact architecture for the mobile gate that should be adopted for a low actuation voltage Suspended- Gate MOSFETalong with faster switching. A suspended Au metal beam of thickness 0.6μm with serpentine flexure hinges can be used as a mobile gate for the SG-MOSFET, whose length and width exactly equals the gate-length and width of the MOSFET and thus having no support structures outside the MOSFET’s substrate domain, resulting in the compactness of the device. Altogether, the use of serpentine folded suspension, defining small holes in the Au beam, use of additional ground electrodes just below the folded suspension for extra electrostatic pull on the beam apart from the MOSFET channel (behaving as a ground plate), and maintaining an air-gap of 1.5μm for excellent isolation in ‘off’ state are the proper design considerations for a reliable and compactSG-MOSFET MEMS switch, being investigated in this paper.


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