Determining the Amount of Hydrogen in Thin Films Well Si1-Xgex: H (X = 0 ÃÂ· 1) for Electronic Devices
Najafov BA* and Abasov FP
Institute of Radiation Problems of Azerbaijan Nationale Academy of Science, Baku, Azerbaijan Republic, Russia
- *Corresponding Author:
- Najafov BA
Institute of Radiation Problems of Azerbaijan Nationale Academy of Science
AZ1143, 9, B. Vahabzade str., Baku
Azerbaijan Republic, Russia
E-mail: [email protected]
Received date: June 30, 2016; Accepted date: November 05, 2016; Published date: November 15, 2016
Citation: Najafov BA, Abasov FP (2016) Determining the Amount of Hydrogen in Thin Films Well Si1-xGex: H (X = 0 ÷ 1) for Electronic Devices. J Material Sci Eng 5:295. doi: 10.4172/2169-0022.1000295
Copyright: © 2016 Najafov BA, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Possibilities of plasma chemical deposition of ÃÂ°-Si1-xGex:H (x=0 ÷ 1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in ÃÂ°-Si:H and ÃÂ°-Ge:H films is measured. The ÃÂ°-Si:H and ÃÂ°-Si0,88Ge1,2:H films were used to fabricate three-layer solar with an element area of 13 sm2 and an efficiency (ξ) of 9.5%.