Electrical Resistivity Change of SeTeAg Compositions to Thermal and Pressure as StressChaudhary N1*, Prasad KNN2 and Goyal N1
- *Corresponding Author:
- Neeru Chaudhary
Department of Physics
Punjab University, Chandigarh-160014, India
E-mail: [email protected]
Received Date: April 28, 2017; Accepted Date: May 18, 2017; Published Date: May 28, 2017
Citation: Chaudhary N, Prasad KNN, Goyal N (2017) Electrical Resistivity Change of SeTeAg Compositions to Thermal and Pressure as Stress. J Material Sci Eng 6: 339. doi: 10.4172/2169-0022.1000339
Copyright: © 2017 Chaudhary N, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
To understand the behaviour of materials for applications in solid state electronic devices, the materials are to be exposed to different stresses such as thermal, electrical, humidity, optical, nuclear radiations, pressure (static or dynamic) etc. to better understand their structural, morphology, conduction, optical and sensing properties. The Se85-xTe15Agxcompositions prepared from melt-quench technique were exposed to high pressure (0-10 GPa) and temperature (300-373 K). The results depict the change in resistivity with respect to pressure in forward as well as backward pressurization. These results depicts that there is very small change in resistivity with change in pressure and the change in resistivity with respect to pressure follows the same pattern, when the pressure is applied from atmospheric pressure to 10 GPa and vice versa. The results of resistivity change with the variation of Silver in the compositions are also reported in this study. Similar results are observed in case of resistivity change with respect to temperature. Some deviation is observed in the results which are well explained with average coordination number, fermi level change and crystallinity.