Embedded Ring Modulators and SwitchesDas U1* and Sadasivan V2
- *Corresponding Author:
- Das U
Department of Electrical Engineering
Indian Institute of Technology, Kalyanpur
Kanpur, 208016, Uttar Pradesh, India
Tel: 0512 259 0151
E-mail: [email protected]
Received date: June 16, 2017; Accepted date: June 25, 2017; Published date: June 30, 2017
Citation: Das U, Sadasivan V (2017) Embedded Ring Modulators and Switches. J Laser Opt Photonics 4: 163. doi: 10.4172/2469-410X.1000163
Copyright: © 2017 Das U, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Micro embedded ring resonator electro-optic switching in InGaAsP based quantum well structures is briefly reviewed and all optic switching is presented. A 20Gbps electro-optic modulator with >12dB extinction ratio has been proposed using quantum confined stark effect tuning, for which a novel high speed coplanar-microstrip inverted ground plane transition has also been designed. All optical tuning is used to theoretically demonstrate a 20G packets/s switching with a 5dB switching ratio. The fabricated micro embedded ring resonator ring using e-beam lithography and Al lift off mask has been demonstrated and the measured device spectrum is found to match well with the simulated results.