alexa Fabrication of Length Tunable ZnO Nanowire Arrays and Investigation on Their Effect for Dye-Sensitized Solar Cells
ISSN: 2169-0022

Journal of Material Sciences & Engineering
Open Access

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Research Article

Fabrication of Length Tunable ZnO Nanowire Arrays and Investigation on Their Effect for Dye-Sensitized Solar Cells

Meili Wang* and Yan Wang

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

*Corresponding Author:
Meili Wang
State Key Laboratory for Superlattices and Microstructures
Institute of Semiconductors
Chinese Academy of Sciences
P.O. Box 912, Beijing 100083, China
Tel: +86-010-82304982-802
Fax: +86-010- 82305056
E-mail: [email protected]

Received Date: November 01, 2011; Accepted Date: November 23, 2011; Published Date: November 27, 2011

Citation: Wang M, Wang Y (2011) Fabrication of Length Tunable ZnO Nanowire Arrays and Investigation on Their Effect for Dye-Sensitized Solar Cells. J Material Sci Engg 1:101. doi: 10.4172/2169-0022.1000101

Copyright: © 2011 Wang M, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 

Abstract

A series of ZnO nanowire arrays were grown on seeded fluorine-doped tin oxide (FTO) substrates by hydrothermal method. The effect of reaction solution concentration on the length and morphology of ZnO nanowire arrays, as well as cell performance in dye-sensitized solar cell (DSSC) was investigated. It was found that with the increase of growth solution concentration, the ZnO nanowires became longer in length, but with the bottom of nanowires gradually interconnected to each other. The enlarged ZnO nanowire length lead to increased power conversion efficiency and achieved the highest efficiency of 1.54% with nanowire length of 8.6 μm; however, the further increased nanowire length and connected bottoms of nanowires restrained the further efficiency improvement due to the increased electron recombination and reduced surface area.

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