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InP-based Sb-free Lasers and Photodetectors in 2-3 μm Band | OMICS International | Abstract
ISSN: 2469-410X

Journal of Lasers, Optics & Photonics
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Research Article

InP-based Sb-free Lasers and Photodetectors in 2-3 μm Band

Yong-Gang Zhang*, Yi Gu, Xing-You Chen, Ying-Jie Ma, Yuan-Ying Cao, Li Zhou, Su-Ping Xi, Ben Du, Ai-Zhen Li and Hsby Li

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, PR China

*Corresponding Author:
Yong-Gang Zhang
State Key Laboratory of Functional Materials for Informatics
Shanghai Institute of Microsystem and Information Technology
Chinese Academy of Sciences, 200050 Shanghai, PR China
Tel: +8621-62511070
E-mail: [email protected]

Received Date: October 04, 2015; Accepted Date: November 18, 2015; Published Date: November 25, 2015

Citation: Zhang YG, Gu Y, Chen XY, Ma YJ, Cao YY, et al. (2015) InP-based Sb-free Lasers and Photodetectors in 2-3 μm Band . J Laser Opt Photonics 2:126. doi:10.4172/2469-410X.1000126

Copyright: © 2015 Zhang YG, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Abstract

Zhang et al. efforts on the explore of InP-based Sb-free 2-3 μm band lasers and photodetectors are introduced, including the 2-2.5 μm band type I InGaAs MQW lasers under pseudomorphic triangle well scheme, 2.5-3.0 μm band type I InAs MQW lasers under metamorphic strain compensated well scheme, as well as InGaAs photodetectors of high indium contents with cut-off wavelength large than 1.7 μm. All device structures are grown using gas source MBE method, and CW operation above room temperature have been reached for the lasers with wavelength less than 2.5 μm. Pulse operation of 2.9 μm lasers at TE temperature also have been reached The dark current of 2.6 μm InGaAs photodetectors have been decreased notably with the inserting of supperlattice electron barriers, those types of epitaxial materials have been used to the development of FPA modules for space remote sensing applications.

Keywords

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