Low-temperature Heat Treatment (80ÃÂ°C) Effect on the Electrochemically Synthesized CuInTe2 Thin Films for Energy Harvesting Applications
Lakhe M and Chaure NB*
Electrochemical Laboratory, Department of Physics, Savitribai Phule Pune University, Pune, 411007, India
- *Corresponding Author:
- Chaure NB
Electrochemical Laboratory, Department of Physics
Savitribai Phule Pune University, Pune, 411007, India
Tel: 91202569 2678, 2569 9072, 2569 1709
E-mail: [email protected]
Received Date: October 04, 2015; Accepted Date: November 08, 2015; Published Date: November 18, 2015
Citation: Lakhe M, Chaure NB (2015) Low-temperature Heat Treatment (80ºC) Effect on the Electrochemically Synthesized CuInTe2 Thin Films for Energy Harvesting Applications. J Material Sci Eng 4:204. doi: 10.4172/2169-0022.1000204
Copyright: © 2015 Lakhe M, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
We have investigated the effect of low-temperature (80ºC) post-deposition heat treatment onto CuInTe2 (CIT) thin films prepared by one-step electrochemical technique. Aqueous precursor solution consisting ionic species of Cu, In and Te with pH 4.0 was used for the growth of CIT layers. The deposition potential was optimized using cyclic voltammetry. Conventional three-electrode geometry was used to electrodeposit CIT thin films onto CdS substrates. The structural, optical, morphological, compositional and transport properties were studied with the aid of XRD, Raman, HRTEM, UV-Visible, FESEM, EDAX, I-V and C-V measurements. As-deposited samples were amorphous in nature, however upon heat treatment highly crystalline CIT thin films with tetragonal crystal structure were exhibited. The values of energy band gap for the films deposited at -0.7 V and -0.8 V versus Ag/AgCl were estimated to be in the range 1.02 eV to 1.1 eV. Compact, uniform, void free and well adherent films were deposited at -0.7 V and -0.8 V. The samples were heat treated at 80ºC for 60 minutes therefore, visible changes in the surface morphology were not observed by SEM. Indium rich films were electrodeposited for -0.7 V and -0.8 V, however upon heat treatment stoichiometric layers were obtained. Schottky diodes are formed with Au metal contact in all cases. The solar cell investigated under illumination at 1.5 AM exhibits the short circuit current density (Jsc), 40.75 mA/cm2; open circuit voltage (Voc), 255 mV; fill factor (FF), 41% and power conversion efficiency (η), 4.01%. This low-temperature heat treatment procedure could be advantageous for the fabrication of CIT solar cells onto flexible substrates.