Management of Radiation Exposure Photoelectric Properties of the Double-Barrier Structure Based on Silicon
Abasov FP* and Vahabzadeh B
Institute of Radiation Problems of NAS of Azerbaijan AZ 1143, Baku, str. B.Vaqabzade 9, Russia
- *Corresponding Author:
- Abasov FP
Institute of Radiation Problems of
NAS of Azerbaijan AZ 1143
Baku, str. B.Vaqabzade 9, Russia
E-mail: [email protected]
Received Date: October 25, 2016; Accepted Date: February 16, 2017; Published Date: February 24, 2017
Citation: Abasov FP, Vahabzadeh B (2017) Management of Radiation Exposure Photoelectric Properties of the Double-Barrier Structure Based on Silicon. Ind Eng Manage 6: 204. doi:10.4172/2169-0316.1000204
Copyright: © 2017 Abasov FP, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Developed and analyzed two-barrier structures-silicon-based photodetectors with high sensitivity in the field of integrated short-range. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as awhole, and in the Schottky barrier in the p-n-transitions separately. Also, studied the effect of radiation on the photoelectric and photoluminescence parameters of the two-barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors. The photo detector on the basis of silicon with the increased integrated sensitivity in short-wave area of a range is developed. Influence radiation scale on the mechanism of currents of both in structure like Schottky’s barrier, and in ÃÂ-ÃÂ¿-transitions is investigated. It is shown that two-barrier structures allow to improve photo-electric parameters of traditional detectors. Investigated the impact of radiation on the photoelectric and photoluminescence parameters of two-barrier structures.