NAND Flash Memory Organization and Operations
Novotný R*, Kadlec J and Kuchta R
Brno University of Technology, Technická 3058/10, 616 00 Brno, The Czech Republic
- *Corresponding Author:
- Novotný R
Brno University of Technology
616 00 Brno, The Czech Republic
Received Date: August 26, 2014; Accepted Date: January 20, 2015; Published Date: January 30, 2015
Citation: Novotný R, Kadlec J, Kuchta R (2015) NAND Flash Memory Organization and Operations. J Inform Tech Softw Eng 5:139. doi:10.4172/2165-7866.1000139
Copyright: ©2015 Novotný R, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a Ã¯Â¬Âash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes such as read or program disturbs, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behaviour of memory in time. To prepare a review of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and was our main motivation for this paper.