alexa Numerical Analysis of the Heat Transfer in Heterojunction Device for Optoelectronic Applications | OMICS International | Abstract
ISSN: 2168-9679

Journal of Applied & Computational Mathematics
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Research Article

Numerical Analysis of the Heat Transfer in Heterojunction Device for Optoelectronic Applications

Joseph Dgheim*

Laboratory of Applied Physics (LPA), Mechanical, Thermal and Renewable Energies Team (GMTER), Lebanese University, Lebanon

*Corresponding Author:
Joseph Dgheim
Laboratory of Applied Physics (LPA)
Mechanical, Thermal and Renewable Energies Team (GMTER)
Lebanese University, Lebanon
Tel: 9611612830
E-mail: [email protected]

Received date: October 01, 2015 Accepted date: October 24, 2015 Published date: October 29, 2015

Citation: Dgheim J (2015) Numerical Analysis of the Heat Transfer in Heterojunction Device for Optoelectronic Applications. J Appl Computat Math 4:264. doi:10.4172/2168-9679.1000264

Copyright: © 2015 Dgheim J. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Abstract

Physical and numerical descriptions related to the heat transfer phenomenon inside the multilayer nanomaterial of thin film are determined. The mathematical model, of a multilayer of thin film of tin dioxide that deposits on a composite substrate of Silicon Dioxide/Silicon, is studied and solved by two numerical techniques, by taking into account the variability of the thermal conductivity. The two main interests in this study are the determination of the value of the applied maximum temperature on the multilayer nanomaterial, and the analysis, of the effect of the porosity medium that exists between certain layers, on the heat transfer. In plus, in order to determine our system physical parameters, the influence of the thickness of the thin deposit film is studied and the numerical model, which estimates these values in the heterojunction device, is analyzed.

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