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ISSN: 2169-0022

Journal of Material Sciences & Engineering
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Research Article

Optimization of Rotational Speed in the Growing of the Thin Film Using Sol Gel Method which is Prepared with Spin Coating

Yofentina I1*, Viska IV1, Hikam M2, Bambang S2, Alfan M1 and Wahyu P1

1Jurusan Fisika FMIPA, Universitas Sebelas Maret, Jl. Ir. Sutami 36A Surakarta, Indonesia

2Departemen Fisika FMIPA, Universitas Indonesia, Depok, Indonesia

*Corresponding Author:
Yofentina I
Jurusan Fisika FMIPA, Universitas Sebelas Maret
Jl. Ir. Sutami 36A Surakarta, Indonesia
E-mail: [email protected]

Received Date: August 03, 2012; Accepted Date: September 11, 2012; Published Date: September 18, 2012

Citation: Yofentina I, Viska IV, Hikam M, Bambang S, Alfan M (2012) Optimization of Rotational Speed in the Growing of the Thin Film Using Sol Gel Method which is Prepared with Spin Coating. J Material Sci Eng 1:113. doi: 10.4172/2169-0022.1000113

Copyright: © 2012 Yofentina I, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Abstract

We investigated the effects of the rotational speed in the spin coating process for growing the BZT thin film. In this process, the rotational speed is taken to be 2000 rpm, 3000 rpm and 4000 rpm while the number of layer is kept constant in five layers. We also discuss the effect of the layers number in the growing of the BZT thin films. For this purpose, we take the layers number to 5, 10 and 15 layers and take the constant rotational speed of 4000rpm. In order to characterize the formed BZT thin film, the composition, crystal structure and morphological tests are performed. We found that the increasing of the rotational speed then the deposited material in the Si substrate is decreased. As a result, the X-ray intensity in certain orientation is also decreased which is indicates that the probability to form the crystal in a certain orientation is influenced by deposited material in the Si substrate. The measured grains size of the BZT thin film almost similar for the three rotational speeds. However, in the variation of layer numbers, the grain size is increasing as the increasing of layers number.

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