Effect of Sputtering Technique and Properties of TiO2 Doped with SnO2 Thin Films
Received Date: Aug 28, 2018 / Accepted Date: Sep 20, 2018 / Published Date: Sep 30, 2017
Doped oxide materials of 90% of TiO2 was doped with 10% of SnO2 that target has been deposited at a substrate temperature of 250°C for 1 hour by using DC Sputtering technique. The as synthesized target was TiO2-SnO2 was used to deposit on the glass substrates. The deposited oxide thin film was characterized for their structural, surface morphological, electrical and optical properties. X-ray diffraction is used for studying the nature and structure, scanning electron, atomic force microscopy and transmission electron microscopy are used to identify the surface morphology of the prepared films. The Van der Pauw technique is employed to measure electrical resistivity and Hall mobility of the film. Wide varieties of methods are available for measuring thin film thicknesses. Stylus profilometry will be helpful to find the thickness of the film, structural studies by X-ray, and micros structural analysis of the film.
Keywords: TiO2-SnO2; Stylus profilometry; X-ray diffraction (XRD); UV-Vis-NIR spectrometer; Scanning Electron microscopy (SEM)
Citation: Manjula N, Selvan G, Ayeshamariam A, Mohamed Saleem A, Geetha N, et al. (2017) Effect of Sputtering Technique and Properties of TiO2 Doped with SnO2 Thin Films. Fluid Mech Open Acc 4: 177. Doi: 10.4172/2476-2296.1000177
Copyright: © 2017 Manjula N, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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