Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs(001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region
- *Corresponding Author:
- Talwar DN
Department of Physics
Indiana University of Pennsylvania
975 Oakland Avenue
56 Weyandt Hall, Indiana
Pennsylvania 15705-1087, USA
E-mail: [email protected]
Received Date: July 14, 2016; Accepted Date: July 27, 2016; Published Date: August 06, 2016
Citation: Talwar DN, Becla P (2016) Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs (001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region. J Material Sci Eng 5:273. doi:10.4172/2169-0022.1000273
Copyright: © 2016 Talwar DN, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
The results of a comprehensive experimental and theoretical study is reported to empathize the optical properties of binary GaAs, ZnTe, CdTe and ternary Cd1-xZnxTe (CZT) alloys in the two energy regions: (i) far-infrared (FIR), and (ii) near-infrared (NIR) to ultraviolet (UV). A high resolution Fourier transform infrared spectrometer is used to assess the FIR response of GaAs, ZnTe, CdTe and CZT alloys in the entire composition 1.0 ≥ x ≥ 0 range. Accurate model dielectric functions are established appositely to extort the optical constants of the binary materials. The simulated dielectric functions εÃ¯ÂÂ¥(ω) and refractive indices n~(ω) are meticulously appraised in the FIR → NIR → UV energy range by comparing them against the existing spectroscopic FTIR and ellipsometry data. These outcomes are expended eloquently for evaluating the polarization dependent reflectivity R(λ) and transmission T(λ) spectra of ultrathin CZT/GaAs (001) epifilms. A reasonably accurate assessment of the CZT film thickness by reflectivity study has offered a credible testimony for characterizing any semiconducting epitaxially grown nanostructured materials of technological importance.