Raman, Photoluminescence (PL) and Atomic Force Microscopy (AFM) Analysis of Electron Beam Evaporated Annealed Cdse Thin Films
|Rani.S 1, Shanthi.J 2
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Cadmium selenide (CdSe) thin films on glass substrates were prepared by physical vapor deposition under vacuum by electron beam evaporation technique at room temperature (RT) and annealed at 100, 200 and 300 o C respectively. Photoluminescence (PL) spectra were recorded in the wavelength region of 470 to 600 nm. The result shows that the EB evaporated CdSe films have strong PL in the green region and the emission band values observed in PL studies are very much blue shifted. Raman result shows that the peak corresponding to the second order (2 LO) and third order (3 LO) phonon modes at 416 and 625 cm-1 respectively. The first order LO phonon mode is not observed. The surface morphological quality of electron beam evaporated CdSe films were analyzed by atomic force microscopy (AFM).