alexa Realization and Characterization of Gold-Microcrystalli
ISSN: 2332-0796

Journal of Electrical & Electronic Systems
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Research Article

Realization and Characterization of Gold-Microcrystalline Silicon Schottky Diodes

Mohammed-Brahim T1, Zanat K2, Hafdallah A3, Aida MS3, Mahdjoubi L4 and Ayed H4*

1GM-IETR, Université RENNES I, Rennes Cedex, France

2Laboratory of physics, University 8, Mais Guelma, Algeria

3Laboratory of Thin Films and Interfaces, Faculty of Science, Department of Physics, University of Constantine 1, Algeria.

4LESIM, Institute of physics, University of Annaba BP.12, 23000, Sidi Amar, Algeria

*Corresponding Author:
Ayed H
LESIM, Institute of physics University of Annaba BP
12, 23000, Sidi Amar, Algeria
Tel: +213 661 04 08 93
E-mail: [email protected]

Received Date: January 07, 2016; Accepted Date: February 11, 2016; Published Date: March 15,2016

Citation: Mohammed-Brahim T, Zanat K, Hafdallah A, Aida MS, Mahdjoubi L, et al. (2016) Realization and Characterization of Gold-Microcrystalline Silicon Schottky Diodes. J Electr Electron Syst 5:176. doi:10.4172/2332-0796.1000176

Copyright: © 2016 Mohammed-Brahim T, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 

Abstract

Thin films of microcrystalline silicon (μc-Si) were deposited by (LPCVD: Low Pression Chemical Vapour Deposition) to realise Au-μcSi Schottky diodes which are powerful devices to determine several μc-Si characteristic parameters which are never obtained with simple layers without serious difficulties. Therefore, good quality Schottky devices have been successfully made and present an excellent reproducibility. The current voltage (I-V) characteristics of these devices have given an ideality factor (n) in the range (1.5-2) and a barrier height Ф(I-V) between 0.63 and 0.97eV. This last parameter was found lower than the barrier height Ф(C-V) deduced from the capacitance-voltage characteristics (C-2-V). This difference is attributed to the existence of insulated interface layer as several other authors.

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