Synthesis and Electrical Transport Properties of CuInGaTe2
Received Date: Apr 11, 2018 / Accepted Date: Apr 18, 2018 / Published Date: Apr 25, 2018
Copper Indium Gallium di-telluride (CIGT) single crystals were synthesized by a special modified Bridgman technique for crystal growth. Our XRD patterns clearly exhibited single phase. The temperature dependence of the electrical conductivity σ(T), Hall coefficient RH(T) in CuInGaTe2 single crystals have been demonstrated over the temperature range 143-558 K for the first time. The Hall coefficient sign confirms the samples displays the p-type conducting. The temperature dependence of the conductivity, Hall coefficient, Hall mobility, and charge carriers concentration were investigated were presented with a clear and effective pictures. CuInGaTe2 single crystals revealed electrical band gaps (or "transport gaps") ranging from 0.64 eV to 0.85 eV. The results obtained from electrical conductivity and carrier concentration revealed the sample p-type with acceptor energy level equal to ≈ 0.027 eV. From the obtained experimental data, the main fundamental physical constants and others for crystals under consideration have been estimated.
Keywords: Single crystals; Electrical conductivity; Cu–III–VI2 Chalcopyrite semiconductors
Citation: Salem A, Salwa AS, Hussein SA, Ezzeldien M (2018) Synthesis and Electrical Transport Properties of CuInGaTe2. J Laser Opt Photonics 5: 183. Doi: 10.4172/2469-410X.1000183
Copyright: © 2018 Salem A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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