Theoretical Predictions on Physical Properties of Ge-Se-Bi Glass System with Compositional Variations
Satya Prakash Saxena1, Sunita Chawla2, Shilpa Gupta3, Nikhil Rastogi4 and Manish Saxena3*
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The compositional effect on some physical properties with the variation in bismuth content has been studied theoretically for Ge-Se-Bi glassy semiconductors. The present Ge-Se-Bi system viz: Ge10Se90-xBix, Ge14Se86-xBix, Ge18Se82-xBix (x = 4, 8, 12, 16, 20, 24 at. %) is found to be in accordance with the earlier researches according to which system with large number of lone-pair electrons constitutes a stable state. The addition of Bi to Ge-Se glassy alloys supposed to change in the whole category of physical properties. It has been found that almost all the parameters, studied here, vary linearly with the increase in Bi content, thus making this suitable for phase change optical recording. The phase change can be reversibly switched between the amorphous and crystalline state and find applications in rewritable optical recording.