alexa Is There A Required Lattice Match In Horizontal Growth Of Nanowires?
ISSN: 2169-0022

Journal of Material Sciences & Engineering
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3rd International Conference and Exhibition on Materials Science & Engineering
October 06-08, 2014 Hilton San Antonio Airport, USA

Babak Nikoobakht and Andy Herzing
Accepted Abstracts: Material Sci Eng
DOI: 10.4172/2169-0022.S1.017
Abstract
Metal-catalyzed surface-directed vapor-liquid-solid (SVLS) growth of nanostructures has been shown to be a promising platform for horizontal formation of nanowires (NWs) and their scalable interfacing. One of the benefits of this method is elimination of post-growth assembly processes and offering a direct route for in-situ device integration. We have been exploring thisapproach for growth of a variety of semiconductor heterojunctions and in this talk we present some of our latest data on growth and characterization of TiO2and CdSe on GaN and Sapphire. While lattices of the selected crystals theoreticallydo not show any matches, directed and horizontal growth indicates existence of a pseudo-lattice match in a preferred growth direction. Results show that this preferred direction is required to be along the width of a NW. However, in better lattice-matched heteroepitaxies, this match could be overshadowed by the lattice match along the NW length. We also present examples on influence of the substrate on defining thenanocrystal orientation and contrast them with other classes of crystals such as wurtzite or cubic that tends to growin specific crystal orientations regardless of the structure of the substrate.
Biography
Metal-catalyzed surface-directed vapor-liquid-solid (SVLS) growth of nanostructures has been shown to be a promising platform for horizontal formation of nanowires (NWs) and their scalable interfacing. One of the benefits of this method is elimination of post-growth assembly processes and offering a direct route for in-situ device integration. We have been exploring thisapproach for growth of a variety of semiconductor heterojunctions and in this talk we present some of our latest data on growth and characterization of TiO2and CdSe on GaN and Sapphire. While lattices of the selected crystals theoreticallydo not show any matches, directed and horizontal growth indicates existence of a pseudo-lattice match in a preferred growth direction. Results show that this preferred direction is required to be along the width of a NW. However, in better lattice-matched heteroepitaxies, this match could be overshadowed by the lattice match along the NW length. We also present examples on influence of the substrate on defining thenanocrystal orientation and contrast them with other classes of crystals such as wurtzite or cubic that tends to growin specific crystal orientations regardless of the structure of the substrate.
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