Reach Us +44-1522-440391
Simulation Studies On Crystalline Silicon Based Back Heterojunction Solar Cells | 35998
ISSN: 2090-4541

Journal of Fundamentals of Renewable Energy and Applications
Open Access

Our Group organises 3000+ Global Conferenceseries Events every year across USA, Europe & Asia with support from 1000 more scientific Societies and Publishes 700+ Open Access Journals which contains over 50000 eminent personalities, reputed scientists as editorial board members.

Open Access Journals gaining more Readers and Citations
700 Journals and 15,000,000 Readers Each Journal is getting 25,000+ Readers

This Readership is 10 times more when compared to other Subscription Journals (Source: Google Analytics)
All submissions of the EM system will be redirected to Online Manuscript Submission System. Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal.

Simulation studies on crystalline silicon based back heterojunction solar cells

International Conference on Green Energy & Expo

R Jeyakumar

National Physical Laboratory, India Texas A&M University-Kingsville, USA

Posters-Accepted Abstracts: J Fundam Renewable Energy Appl

DOI: 10.4172/2090-4541.C1.006

Back heterojunction (BHJ) solar cell is a combination of c-Si based (i) front heterojunction cell, and (ii) back junction cell. BHJ solar cell was designed by combining the advantages of the above two cells. Absence of front grids, interdigitated point contact structure at the rear side (from back junction cell), and low processing temperature around 250°C, passivation by intrinsic a-Si:H on both sides of c-Si (from front heterojunction cell) were combined to form BHJ cell. In this design, shadowing losses due to front grid structure, and atrade-off between series resistance and reflection can be completely eliminated. Also, in the rear side, sufficient contact metal can be used to avoid resistive losses. In our simulation study, a low doped (1.0 x 1015/ cm3), textured, n-type c-Si with a very high lifetime of 2-3 ms was used. Silicon nitride was used as an antireflection layer and intrinsic a-Si:H was used as passivation layer on both sides of c-Si. At the rear side of the cell, both emitter (p+-a-Si:H) and back surface field (n+-a-Si:H) were formed as an array of an interdigitated pattern with their respective contacts. Doped a-Si:H (emitter and BSF) circular region diameters were fixed as 20 μm and 10 μm respectively and space between emitter and BSF was fixed as 10 μm. Using optimized parameters [1,2], and Silvaco Atlas tools, simulation was carried out as a function of pyramid base width and height. For an optimized BHJ design, an efficiency as high as 26.6% have been achieved.

R Jeyakumar completed his PhD degree on semiconductor films for photovoltaic applications from National Physical Laboratory/University of Delhi, India. After having 11 years of Canadian experience from University of Waterloo, research in Motion, and McMaster University, he moved back to India and joined as Principal Scientist at NPL, New Delhi. He is having experience on various solar cell technologies which includes crystalline silicon based solar cells- front junction, back junction, front heterojunction, and back heterojunction; thin film solar cells; silicon nanowires for solar cells etc. Currently, he is working on low cost c-Si solar cells.

Email: [email protected]