alexa Surface Chemistry And Interface Reactions Of Chalcogenide Semiconductors Deposited By Solutionbased Methods For Solar Cell Applications
ISSN: 2169-0022

Journal of Material Sciences & Engineering
Open Access

OMICS International organises 3000+ Global Conferenceseries Events every year across USA, Europe & Asia with support from 1000 more scientific Societies and Publishes 700+ Open Access Journals which contains over 50000 eminent personalities, reputed scientists as editorial board members.

Open Access Journals gaining more Readers and Citations

700 Journals and 15,000,000 Readers Each Journal is getting 25,000+ Readers

This Readership is 10 times more when compared to other Subscription Journals (Source: Google Analytics)

Share This Page

Additional Info

Loading
Loading Please wait..
 

3rd International Conference and Exhibition on Materials Science & Engineering
October 06-08, 2014 Hilton San Antonio Airport, USA

Francisco S Aguirre-Tostado
Accepted Abstracts: Material Sci Eng
DOI: 10.4172/2169-0022.S1.017
Abstract
The ability to produce stoichiometric semiconducting films by solution-based methods is of paramount importance for large area electronics and solar cell applications. In addition, low temperature processing on large areasubstrates promises to drive down costs. Chalcogenide materials offer p- and n-type semiconductors with attractive characteristics for electronic and photovoltaic applications. Necessary operations for device fabrication requires an atomistic understanding of the structure and chemical reactions taking place during thin film deposition and post-deposition thermal treatments. In this respect, X-ray photoelectron spectroscopy (XPS) is uniquely suited for tracking chemical reactions occurringsurface and interface of nanometric layers. The chemical analysis and thermal stability for surface and interface reactions of binary chalcogenide semiconductors is presented. CuS, ZnS, SnS2 and CdS thin films were deposited by the successive ionic layer absorption and reaction method (SILAR) in a glove-box attached to the XPS load-lock chamber for in-situ analyses. Step by step XPS analysis of the SILAR process reveals an incubation period that depends on temperature and ion concentrations. Multilayer structure stability is discussed in terms of chemical reactivity and diffusion of cations. Finally, a demonstration of how theobtained results can help to engineer a more stable structureis presented.
image PDF   |   image HTML
 

Relevant Topics

Peer Reviewed Journals
 
Make the best use of Scientific Research and information from our 700 + peer reviewed, Open Access Journals
International Conferences 2017-18
 
Meet Inspiring Speakers and Experts at our 3000+ Global Annual Meetings

Contact Us

 
© 2008-2017 OMICS International - Open Access Publisher. Best viewed in Mozilla Firefox | Google Chrome | Above IE 7.0 version
adwords