alexa Defects and transport properties of electron-irradiated microcrystalline silicon with successive annealing
Engineering

Engineering

Journal of Electrical & Electronic Systems

Author(s): Bronner W, Kleider JP, Brggemann R, Mehring M

Abstract Share this page

We present a systematic study of isochronal annealing of electron-irradiated microcrystalline silicon thin films using a set of complementary characterisation techniques: electrically detected magnetic resonance, steady-state and modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. These techniques allowed monitoring of the evolution of defect densities, optical absorption, as well as transport and electronic properties such as dark conductivity, mobility-lifetime product of electrons and ambipolar diffusion length. We show how and to what extent defects can be removed upon subsequent isochronal annealing steps. While the hole transport properties are restored after annealing, we find the values for the electron transport properties remain deteriorated.

This article was published in Thin Solid Films and referenced in Journal of Electrical & Electronic Systems

Relevant Expert PPTs

Relevant Speaker PPTs

Recommended Conferences

Relevant Topics

Peer Reviewed Journals
 
Make the best use of Scientific Research and information from our 700 + peer reviewed, Open Access Journals
International Conferences 2017-18
 
Meet Inspiring Speakers and Experts at our 3000+ Global Annual Meetings

Contact Us

 
© 2008-2017 OMICS International - Open Access Publisher. Best viewed in Mozilla Firefox | Google Chrome | Above IE 7.0 version
adwords