Author(s): Nam CY, Jaroenapibal P, Tham D, Luzzi DE, Evoy S, , Nam CY, Jaroenapibal P, Tham D, Luzzi DE, Evoy S, , Nam CY, Jaroenapibal P, Tham D, Luzzi DE, Evoy S, , Nam CY, Jaroenapibal P, Tham D, Luzzi DE, Evoy S,
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Abstract The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.
This article was published in Nano Lett
and referenced in Research & Reviews: Journal of Botanical Sciences