Author(s): Late DJ, Liu B, Luo J, Yan A, Matte HS,
Abstract Share this page
Abstract Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
This article was published in Adv Mater
and referenced in Bioenergetics: Open Access