alexa High Rate Thick Film Growth.


Research & Reviews: Journal of Pure and Applied Physics

Author(s): J A Thornton

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Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2 mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780?nm) is 85.6%, and the best resistivity is 5 × 1 0 ? 2 Ω -cm when annealed at 600°C in 3% H2/97% N2 mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation.

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This article was published in Ann. Rev. Mater. Sci. and referenced in Research & Reviews: Journal of Pure and Applied Physics

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