alexa Operation of graphene transistors at gigahertz frequencies.
Physics

Physics

Journal of Lasers, Optics & Photonics

Author(s): Lin YM, Jenkins KA, ValdesGarcia A, Small JP, Farmer DB,

Abstract Share this page

Abstract Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications. This article was published in Nano Lett and referenced in Journal of Lasers, Optics & Photonics

Relevant Expert PPTs

Relevant Speaker PPTs

Recommended Conferences

  • 6th International Conference on Photonics
    July 31- August 01, 2017 Milan, Italy
  • 7th International Conference on Laser Optics
    July 31- August 02, 2017 Milan,Italy
Peer Reviewed Journals
 
Make the best use of Scientific Research and information from our 700 + peer reviewed, Open Access Journals
International Conferences 2017-18
 
Meet Inspiring Speakers and Experts at our 3000+ Global Annual Meetings

Contact Us

 
© 2008-2017 OMICS International - Open Access Publisher. Best viewed in Mozilla Firefox | Google Chrome | Above IE 7.0 version
adwords