alexa SnS thin-films by RF sputtering at room temperature
Materials Science

Materials Science

Journal of Material Sciences & Engineering

Author(s): Katy Hartman, JL Johnson, Mariana I Bertoni, Daniel Recht, Michael J Aziz

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Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08–1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

This article was published in SnS thin-films by RF sputtering at room temperature and referenced in Journal of Material Sciences & Engineering

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