alexa Spectroscopic and modeling investigations of the gas phase chemistry and composition in microwave plasma activated B2H6 CH4 Ar H2 mixtures.
Mathematics

Mathematics

Journal of Applied & Computational Mathematics

Author(s): Ma J, Richley JC, Davies DR, Ashfold MN, Ma J, Richley JC, Davies DR, Ashfold MN

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Abstract A comprehensive study of microwave (MW) activated B2H6/CH4/Ar/H2 plasmas used for the chemical vapor deposition of B-doped diamond is reported. Absolute column densities of ground state B atoms, electronically excited H(n = 2) atoms, and BH, CH, and C2 radicals have been determined by cavity ring down spectroscopy, as functions of height (z) above a molybdenum substrate and of the plasma process conditions (B2H6, CH4, and Ar partial pressures; total pressure, p; and supplied MW power, P). Optical emission spectroscopy has also been used to explore variations in the relative densities of electronically excited H atoms, H2 molecules, and BH, CH, and C2 radicals, as functions of the same process conditions. These experimental data are complemented by extensive 2D(r, z) modeling of the plasma chemistry, which result in substantial refinements to the existing B/C/H/O thermochemistry and chemical kinetics. Comparison with the results of analogous experimental/modeling studies of B2H6/Ar/H2 and CH4/Ar/H2 plasmas in the same MW reactor show that: (i) trace B2H6 additions have negligible effect on a pre-established CH4/Ar/H2 plasma; (ii) the spatial extent of the B and BH concentration profiles in a B2H6/CH4/Ar/H2 plasma is smaller than in a hydrocarbon-free B2H6/Ar/H2 plasma operating at the same p, P, etc.; (iii) B/C coupling reactions (probably supplemented by reactions involving trace O2 present as air impurity in the process gas mixture) play an important role in determining the local BHx (x = 0-3) radical densities; and (iv) gas phase B atoms are the most likely source of the boron that incorporates into the growing B-doped diamond film. This article was published in J Phys Chem A and referenced in Journal of Applied & Computational Mathematics

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