alexa Spin diode based on Fe MgO double tunnel junction.
Materials Science

Materials Science

Journal of Nanomedicine & Biotherapeutic Discovery

Author(s): Iovan A, Andersson S, Naidyuk YG, Vedyaev A, Dieny B, , Iovan A, Andersson S, Naidyuk YG, Vedyaev A, Dieny B, , Iovan A, Andersson S, Naidyuk YG, Vedyaev A, Dieny B, , Iovan A, Andersson S, Naidyuk YG, Vedyaev A, Dieny B,

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Abstract We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000\%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications. This article was published in Nano Lett and referenced in Journal of Nanomedicine & Biotherapeutic Discovery

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