alexa Temperature-dependence of barrier height of swift heavy ion irradiated Au n-Si Schottky structure
Engineering

Engineering

Journal of Electrical & Electronic Systems

Author(s): Kumar S, Katharria YS, Kumar S, Kanjilal D

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The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50–300 K). The forward bias current–voltage (I–V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

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This article was published in Solid-Stat Electronics and referenced in Journal of Electrical & Electronic Systems

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