alexa Temperature-dependence of barrier height of swift heavy ion irradiated Au n-Si Schottky structure
Engineering

Engineering

Journal of Electrical & Electronic Systems

Author(s): Kumar S, Katharria YS, Kumar S, Kanjilal D

Abstract Share this page

The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50–300 K). The forward bias current–voltage (I–V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

  • To read the full article Visit
  • Open Access
This article was published in Solid-Stat Electronics and referenced in Journal of Electrical & Electronic Systems

Relevant Expert PPTs

Relevant Speaker PPTs

Recommended Conferences

Relevant Topics

Peer Reviewed Journals
 
Make the best use of Scientific Research and information from our 700 + peer reviewed, Open Access Journals
International Conferences 2017-18
 
Meet Inspiring Speakers and Experts at our 3000+ Global Annual Meetings

Contact Us

 
© 2008-2017 OMICS International - Open Access Publisher. Best viewed in Mozilla Firefox | Google Chrome | Above IE 7.0 version
adwords