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Original Articles Open Access
In the present work, the compound semiconducting zi nc sulfide (ZnS) thin films were deposited on glass substrate using successive ionic layer adsorption and reactio n technique by the various sulfur concentration(0.2 M to 1 M). The preparative parameters such as concentration, t emperature, deposition time, pH of solution have be en optimized. The characterization of thin films was c arried out for the structural and optical propertie s. The thin films were characterized by using X-ray diffraction (XRD) , UV-VIS Spectra and photoluminescence (PL). The X- ray diffraction pattern (XRD) revealed that the ZnS fil m has hexagonal and cubic crystal structure. All de posited films exhibit a relatively high transparency in the range of 300 to 800 nm. The band gap varies from 3 to 3. 75 eV. Photoluminescence spectra showed blue emission band (480 nm) and green emission band (524 nm).
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Author(s): neefa Mohamed Mohaideen Kandasamy Saravanakumar Suldanmohideen Sheik Fareed Mohideen Mohamed Gani Kalvathee and Jeyaraj Dhaveethu Raja
zinc sulfide, absorption coefficient and photoluminescence (PL), optical, zinc sulfide, zinc sulfide thin films