alexa Abstract | The studies on optical and structural properties of zinc sulfide thin films deposited by SILAR method

Journal of Chemical and Pharmaceutical Research
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Abstract

In the present work, the compound semiconducting zi nc sulfide (ZnS) thin films were deposited on glass substrate using successive ionic layer adsorption and reactio n technique by the various sulfur concentration(0.2 M to 1 M). The preparative parameters such as concentration, t emperature, deposition time, pH of solution have be en optimized. The characterization of thin films was c arried out for the structural and optical propertie s. The thin films were characterized by using X-ray diffraction (XRD) , UV-VIS Spectra and photoluminescence (PL). The X- ray diffraction pattern (XRD) revealed that the ZnS fil m has hexagonal and cubic crystal structure. All de posited films exhibit a relatively high transparency in the range of 300 to 800 nm. The band gap varies from 3 to 3. 75 eV. Photoluminescence spectra showed blue emission band (480 nm) and green emission band (524 nm).

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Author(s): neefa Mohamed Mohaideen Kandasamy Saravanakumar Suldanmohideen Sheik Fareed Mohideen Mohamed Gani Kalvathee and Jeyaraj Dhaveethu Raja

Keywords

zinc sulfide, absorption coefficient and photoluminescence (PL), optical, zinc sulfide, zinc sulfide thin films

 
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