| Reaction |
Rate constant* |
| (a) M+(KE=kTg) +e*(KE=IP) → (M+-e*)(KE=IP) ↔ (M+e-)*(KE=IP) |
 |
| (b) (M+e-)* → M+hn(so) |
 |
| (c) (M+e-)* → M+hn(s1) |
 |
| (d) (M+e-)* → M+hn(si) |
 |
*kso and ks1 are the rate constants for radiative relaxation to the so and s1 electronic
states, IP=ionization potential of M, and ΔEso, ΔEs1 and ΔEsi are the energy
differences between the so, s1 and si electronic states with the ground state, so, and
gsi and gTS are the statistical weights of the Si state and ambipolar diffusion ionelectron
transition state, respectively (Source: See Ref. [63]) |
