| Variable |
Value |
Variable |
Value |
| Purge-trap: |
|
|
|
| Valve oven temperature |
140◦C |
Dry purge flow |
100 mL/min |
| Transfer line temperature |
140◦C |
GC start |
Start of desorb |
| Sample mount temperature |
90◦C |
Desorb preheat temperature |
175◦C |
| Purge ready temperature |
45◦C |
Desorb drain |
On |
| Sample preheat time |
1 min |
Desorb time |
4 min |
| Sample temperature |
60◦C |
Desorb temperature |
180◦C |
| Purge time |
20 min |
Desorb flow |
400 mL/min |
| Purge temperature |
0◦C |
Bake rinse |
On |
| Purge flow |
35 mL/min |
Number of bake rinses |
3 |
| Condenser ready temperature |
40◦C |
Bake drain time |
0.80 min |
| Condenser purge temperature |
20◦C |
Bake drain flow |
300 mL/min |
| Rinse loop time |
3 min |
Bake time |
8.00 min |
| Purge loop time |
1.40 min |
Bake temperature |
230◦C |
| Dry purge time |
3.00 min |
Bake flow |
200 mL/min |
| Dry purge temperature |
20◦C |
Condenser bake temperature |
200◦C |
| |
|
|
|
| GC-MS: |
|
|
|
| GC |
|
MS |
|
| Oven: |
|
Mode |
EI/SIM |
| Helium gas flow |
1 mL/min |
Electron energy |
70 ev |
| Initial temperature/time |
40◦C/3 min |
Emission current |
34.6 µA |
| Ramp rate 1 |
5◦C/min |
EM volts |
Atune + 400 |
| Final temperature 1/final time 1 |
160◦C/2 min |
Transfer line temperature |
280◦C |
| Ramp rate 2 |
20◦C/min |
Source temperature |
230◦C |
| Final temperature 2/final time 2 |
280◦C/2 min |
Quadrupole temperature |
150◦C |
| Injector: |
|
Solvent delay |
13 min |
| Injector mode |
Pulsed (23 psi),
Split (4 min) |
|
|
| Split ratio |
2:1 |
|
|
| Injector temperature |
240◦C |
|
|
