Journal of Nanomedicine & Nanotechnology

Comparative study of silicon nanowire and carbon nanotubes field effect transistors in ballistic transport

Nano World Summit: Current and Future Perspectives

June 06-07, 2018 | Philadelphia, USA

Shaukat Ayesha and Naz E Islam

BUITEMS, Pakistan
University of Missouri, USA

Scientific Tracks Abstracts: J Nanomed Nanotechnol

Abstract:

This study demonstrates the comparison of silicon nanowire field effect transistor (SiNWTs) and carbon nanotube field effect transistor (CNTFETs) using FETTOY, a nano device simulator. In this regard, effect of different structural parameters like oxide thickness, gate-controlled parameter, thickness of dielectric material of all the structures are analyzed. Results of quantum capacitance, drain current v/s drain voltage, drain current v/s gate voltage, drain induced barrier lowering (DIBL), threshold swing, injection velocity, on and off current and output conductance for each structure at different temperature are also discussed.

Biography :

Shaukat Ayesha has completed her BS in Electrical Engineering with specialization in Electronic Engineering from Dawood Collage Karachi in 2006. In 2007, she has joined Balochistan University of Information Technology, Engineering and Management Sciences (BUITEMS) as a Lecturer. In 2010, she got Fulbright Scholarship and completed her Master’s in Electrical Engineering from University of Missouri Columbia, USA. Since year 2013, she rejoined BUITEMS as an Assistant Professor and is also Chairing Department of Electrical Engineering.
Email:asgqb@mail.missouri.edu