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Growth and characterization of amorphous V2O5 quantum dots
4th International Conference on Nanotek & Expo
December 01-03, 2014 DoubleTree by Hilton Hotel San Francisco Airport, USA

Sahil Dhawan, Tanuj Dhawan and Agnikumar G Vedeshwar

Accepted Abstracts: J Nanomed Nanotechnol

Abstract:

The amorphous quantum dots of V2O5 have been grown by a fairly simple and most common method of thermal evaporation. The growth flux rate is found to be crucial and important for controlling the dot size and its distribution.The linear relationship of dot size with growth time at low flux rate facilitates the growth of desired dot size. The Raman scattering analyses indicate an important fact that the similar short range order exists in quantum dots as that in crystalline phase. The value of μ=0.233 (me=0.43mo and mh=0.5mo) determined for amorphous phase from this study using the Eg(QD) versus 1/d2 plot compares very well with the literature values μ=0.162 (me=0.24mo and mh=0.5mo) for crystalline V2O5. The magnitude of blue shift in energy gap of the amorphous dots scales with dot size in the same manner as that of crystalline dots for V2O5. This study shows that the nature of quantum confinement in V2O5 dots is almost same in amorphous and crystalline phases. This similarity is quite interesting and motivating for further investigations both in device applications and basic research.