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April 16-17, 2018 Las Vegas, Nevada, USA
2
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Edition of
Graphene & Semiconductors | Diamond Graphite & Carbon Materials Conference
6
th
Edition of
Smart Materials & Structures Conference
&
Journal of Material Sciences and Engineering| ISSN: 2169-0022 | GDCSM-2018 | Volume: 7
Tuneable and large area µ-patterns of reduced graphene oxide for flexible electronics
Mahesh Soni, Juhi Pandey, Satinder K Sharma
and
Ajay Soni
Indian Institute of Technology Mandi, India
R
ecently, two-dimensional (2D) layered materials such as graphene and analogous graphene oxide (GO), reduced graphene oxide
(rGO) with novel functionalities have absorbed attention of scientific community for electronics applications such as such as
sensing, supercapacitors, interconnects, ultra-fast photonics and flexible nano-electronic devices (FETs). Graphene based flexible
devices is an emerging field, however the challenges such as large area, low cost growth and scale up synthesis restricts the use of
graphene. Therefore the synthesis of graphene has evolved with time and several methods have been demonstrated. As an alternative,
the solution processable rGO, obtained via reduction of GO was studied, although, the long term stable dispersion of aqueous rGO
hinders its commercial scale applications.Therefore, in the present workwe demonstrate a facile and swift and photo-catalytic approach
for the preparation of rGO dispersion stable for ~160 days. The stable rGO dispersion may be useful as conductive inks for flexible
electronics, conductive electrodes, interconnects. In addition we also present, a tuneable, site specific, scalable and low temperature
pattering of GO-rGO films under UV illumination (λ ~365 nm) for circuit elements interconnects and all rGO based flexible FET
applications The electrical measurements reveals that the conductivity of the completely exposed rGO is considerably (~150 times)
higher than unexposed GO, suggesting the use of rGO in circuit elements, interconnect and flexible electronic applications. The
tuneable GO reduction approach is adopted for the fabrication of all-carbon, metal free- rGO-FET, on flexible substrates. On tuning
the intensity of UV illumination, the partially exposed rGO was used as a semiconducting channel, while the completely exposed
rGO was used as source/drain/gate electrodes The low temperature, site specific, scalable and large area GO-rGO patterning is found
to be advantageous wearable flexible and lighter electronics applications.
ajay@iitmandi.ac.inJ Material Sci Eng 2018, Volume: 7
DOI: 10.4172/2169-0022-C3-098