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Nearly six decades ago, S. Ovshinsky started research in amorphous materials and in 1968, he reported that certain glasses exhibited a reversible change in resistivity upon a change in phase from amorphous state to crystalline state and vice versa. Phase change memories (PCM) are non-volatile memory devices that use reversible phase change in amorphous materials like Germanium, Antimony and Tellurium (Ge2Sb2Te5) alloy to store information. The phase reversal results in the change in the electrical resistivity of the material used in the memory operation. These materials are broadly classified as chalcogenide materials..... Read More
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