Special Issue Article
A Review of Analytical Modelling Of Thermal Noise in MOSFET
|Seemadevi B. Patil, Kureshi Abdul Kadir
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This paper presents the review of the thermal noise in CMOS devices. The various methods discussed takes into account the modelling of the CMOS devices for the thermal noise. The paper discusses the resistor model, gradual channel approximation, induced gate thermal noise, noise contribution by Rs and Rd. These models can be used for long channel and short channel device modelling by taking into account all of the above models. The thermal noise behaviour of MOSFET with decreasing channel length can be understood.