Special Issue Article
Characteristic Comparison and Improvement of 3D Multi Gate FINFETS
In this paper the characteristic parameters such as threshold voltage, drain currents (ION and IOFF), sub threshold slope of 3-Dimensional SOI Double Gate FINFET, Tri- gate FINFET and Independent Gate FINFET are evaluated with the help of TCAD. Drain currents are optimized by using high-K dielectric and analyzed over different gate lengths. The threshold voltage of these three devices are analyzed using various gate materials of different work functions consequently minimize the short channel effects. It also highlights the electrostatic control on channel by increasing the number of gates.