alexa STRAINED SILICON DEVICES: MECHANISM & APPLICATIONS
ISSN ONLINE(2320-9801) PRINT (2320-9798)

International Journal of Innovative Research in Computer and Communication Engineering
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Research Article

STRAINED SILICON DEVICES: MECHANISM & APPLICATIONS

Sandeep Khichar 1, Laxmikant Paptan 2, Sukoon Mishra3, Akriti Singhal4
  1. M.Tech Scholor, Dept. of ECE. Sri Balaji College of Engg. & Technology, Jaipur, India
  2. M.Tech Scholor, Dept. of ECE. Sri Balaji College of Engg. & Technology, Jaipur, India
  3. B.Tech Scholor, Dept. of ECE. Arya Institute of Engg. & Technology, Jaipur, India
  4. B.Tech Scholor, Dept. of ECE. Engg.College &Research Center, Jaipur, India
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Abstract

Strained silicon devices are one of the most important Technology Enhancers for further Si CMOS developments. The mobility enhancement which is obtained by applying appropriate strain provides higher charge carrier velocity in MOS channels, resulting in a higher current output under a fixed supply voltage (V) and gate oxide thickness (tox).The mechanism of mobility enhancement, methods of strain generation, challenges and drawbacks, improvements and key issues of strained silicon devices and their application for advanced VLSI devices is reviewed in this paper.

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