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Research Article Open Access
In this paper for the first time the author has studied the high frequency, high temperature application possibility of SiC group material based transit time devices. Here SiC of cubic type is studied. The author has designed a 220GHz transit time device based on 3C-SiC. It is depicted that as far as high frequency performance power output and efficiencies are concerned SiC devices are far better, compared to its conventional Si and GaAs counterpart. Also owing to its high thermal conductivity SiC device is capable of handling high temperature to obtain high power at Millimeter wave frequency without facing thermal runaway problem.
Double Drift structure, Transit Time diode, thermal runaway, Poisson equation, continuity equations , current density equations, heat equation, Terahertz regime, COMSOL Multi-Physics software , Experimental Physics,Physics Models