alexa Nanoscale MOSFET

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Nanoscale MOSFET

As per the predictions of International Technology Roadmap of Semiconductors (ITRS), there is a strong need for the replacement of the silicon as a substrate material in a nanoscale MOSFET. Germanium, SiGe, III-V materials or Graphene have been seen as a potential replacement to silicon. This is required to take the Moore’s law ahead in the sub nanoscale technologies. The Moore’s law is also being followed as a performance oriented scaling of the transistors calling it “More than Moore’s” law. In conventional silicon MOSFETs, the mobility is seriously affected by the vertical and horizontal electric fields in the MOS device at the nanometer scale. The reduction in the carrier mobility reduces the drain current and eventually the speed of the transistor. The main advantage of using these alternate materials is to increase the carrier mobility in a MOSFET....... Read More

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