Our Group organises 3000+ Global Conferenceseries Events every year across USA, Europe & Asia with support from 1000 more scientific societies and Publishes 700+ Open Access Journals which contains over 50000 eminent personalities, reputed scientists as editorial board members.
As per the predictions of International Technology Roadmap of Semiconductors (ITRS), there is a strong need for the replacement of the silicon as a substrate material in a nanoscale MOSFET. Germanium, SiGe, III-V materials or Graphene have been seen as a potential replacement to silicon. This is required to take the Moore’s law ahead in the sub nanoscale technologies. The Moore’s law is also being followed as a performance oriented scaling of the transistors calling it “More than Moore’s” law. In conventional silicon MOSFETs, the mobility is seriously affected by the vertical and horizontal electric fields in the MOS device at the nanometer scale. The reduction in the carrier mobility reduces the drain current and eventually the speed of the transistor. The main advantage of using these alternate materials is to increase the carrier mobility in a MOSFET....... Read More
Spanish 
Chinese 
Russian 
German 
French 
Japanese 
Portuguese 
Hindi