Rapid Thermal Annealing effects on the electrical and structural properties of the AZO thin film deposited at a room temperature
Transparent and conductive Al-doped Zinc Oxide (AZO) thin films were prepared on a glass substrate at a room temperature (R.T) by the RF magnetron sputtering method, and then annealed at the temperature of 600℃ in the 98%N2+,2%H2 ambient gas a with the rapid thermal annealing. Rapid thermal annealing effects on the electrical and structural properties of AZO films have been investigated. The 600℃ temperature annealing with different annealing time efficiently affects the structure characteristics and the electrical properties of AZO thin films. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), hall measurement, and UV/VIS spectrometer.